國立臺灣大學物理學研究所博士

Mail: Tylin@mail.ntou.edu.tw

專長

半導體物理實驗、光電半導體製程

目前研究領域

氮化鎵系列材料光電性質、低維度半導體製程

近幾年執行的計畫

研究計劃名稱

補助單位

計劃推動期間

年月日~年月日
低價高功率氮化合物照明二極體－子計畫一：以Si作為氮化物磊晶基板之研究(2/2) 國科會 2005/8/1 至 2006/7/31
低價高功率氮化合物照明二極體－子計畫二：紫外光量子結構之磊晶研究(2/2) 國科會 2005/8/1 至 2006/7/31
總計畫：低價高功率氮化合物照明二極體(2/2) 國科會 2005/8/1 至 2006/7/31
低價高功率氮化合物照明二極體－子計畫一：以Si作為氮化物磊晶基板之研究(1/2) 國科會 2004/8/1 至 2005/10/31
低價高功率氮化合物照明二極體－子計畫二：紫外光量子結構之磊晶研究(1/2) 國科會 2004/8/1 至 2005/7/31
總計畫：低價高功率氮化合物照明二極體(1/2) 國科會 2004/8/1 至 2005/7/31
低價高功率氮化合物照明二極體－子計劃一：以矽作為氮化合物磊晶基板之研究 國科會 2003/8/1 至 2004/7/31
低價高功率氮化合物照明二極體－子計劃二：紫外光量子結構之磊晶研究 國科會 2003/8/1 至 2004/7/31

低價高功率氮化合物照明二極體－總計劃

國科會

2003/8/1 至 2004/7/31

III族-氮化物系列半導體光學性質的研究

國科會

2002/8/1 至2003/7/31

氮化鎵/氮化銦鎵半導體材料發光元件光電特性之研究

國科會

2001/8/1 至 2002/7/31

　

大學部和研究所授課名稱

大學部

物理學(上)、物理學(下)、物理學實驗(上)、物理學實驗(下)、

普通物理(上)、普通物理實驗(上)、普通物理(下)、普通物理實驗(下)

 

研究所

    高等光電實驗專題(一)、光電半導體元件物理、專題討論、半導體光學、光電半導體物理技術、

    寬能隙半導體材料與元件、半導體光學

教師著作

歷年著作目錄

(A)  期刊論文(Papers in Refereed Journals)

 

2008

1.      T. Y. Lin*, J. Chang, and G. Z. Huang, H. M. Lin, and Y. J. Yeah, and J. L. Shen, “Effect of laser illumination on the blue-green luminescence from MCM-41 at room temperature”, J. Phys.: Condens. Matter 20, 255217 (2008)

2.      M. D. Yang, Y. P. Chen, G. W. Shu, J. L Shen, S. C. Hung , G. C. Chi, T. Y. Lin, Y. C. Lee, C. T. Chen, and C. H. Ko, “Hot carrier photoluminescence in InN epilayers”, Appl. Phys. A 90, 123 (2008)

3.      E. Y. Lin, C. Y. Chen, T. S. Lay, T. C. Wang, J. D. Tsay, P. X. Peng, and T. Y. Lin, ”Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a-plane GaN”, Phys. Stat. Sol. (c), 5, 2111(2008)

2007

4.      T. Y. Lin*, P. K. Wei, E. H. Lin, T. L. Tseng, and R. Chang, “Investigation on the correlation between the crystalline and optical properties of InGaN using near-filed scanning optical microscopy”, Electrochem. Solid State Lett. 10, H217 (2007)

5.      T. Y. Lin*, G. M. Chen, and D. Y. Lyu,” Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (11-20) sapphire substrates”, Solid State Commun. 142, 237 (2007)

6.      D. Y. Lyu, T. Y. Lin*, J. H. Lin, S. C. Tseng, J. S. Hwang, H. P. Chiang , C. C. Chiang, and S. M. Lan, “Growth and properties of single phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor”, Sol. Energ. Mat. Sol. C. 91, 888 (2007)

7.      K.J. Chang,, S.M. Lahn, Z.J. Xie, J.Y. Chang, W.Y. Uen, T.U. Lu, J.H. Lin, and T.Y. Lin, “The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer”, J. Crystal. Growth 306,283 (2007)

8.      H. P. Chiang, Z.-W. Chen, J. J. Wu, H. L. Li, T. Y. Lin, E. J. Sanchez, P. T. Leung, “Effects of temperature on the surface plasmon resonance at the metal-semiconductor interface”, Thin Solid films 515, 6953 (2007)

2006

9.      T. Y. Lin*, D. Y. Lyu, J. Chang, J. L. Shen and W. C. Chou, “Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots”, Appl. Phys. Lett., 88, 121917 (2006)　(The paper was selected for publication in the Virtual Journal of Nanoscale Science & Technology, Volume 13, Issue 13 April 3, 2006)

10.  T. Y. Lin, Y. M. Sheu, Y. F. Chen, “Origin of blue-band emission from Mg-doped AlGaN/ GaN Superlattices”, Appl. Phys. Lett. 88, 081912 (2006)

11.  C. L. Wang, W. L. Wang, W. T. Liao, J. R. Gong, C. K. Lin, and T. Y. Lin, “Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films”, J. Crystal. Growth 297, 339 (2006)

12.  G. W. Shu, P. F. Wu, Y. W. Liu, J. S. Wang, J. L. Shen, T. Y. Lin, P. J. Pong, G. C. Chi, H. J. Chang, Y. F. Chen, and Y. C. Lee, “Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers”, J. Phys.: Condens. Matter 18 L543–L549 (2006)

13.  G. W. Shu, C. K. Wang, J. S. Wang, J. L. Shen, R. S. Hsiao, W. C. Chou, J. F. Chen, T. Y. Lin, C. H. Ko and C. M. Lai, “ The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers”, Nanotechnology 17, 5722(2006)   

14.  Y. L. Lai, C. Pu. Liu, Y. H. Lin, R. M. Lin, D. Y. Lyu, Z. X. Peng, and T. Y. Lin, “Effects of the material polarity on the green of InGaN/GaN multiple quantum wells”, Appl. Phys. Lett. 89, 151906(2006)

15.  I. J. Chen, T. T. Chen, Y. F. Chen, and T. Y. Lin, “Nonradiative traps in InGaN/GaN multiple quantum wells revealed by two wavelength excitation”, Appl. Phys. Lett. 89, 142113(2006)

16.  G. W. Shu, P. F. Wu, M. H. Lo, J. L. Shen, T. Y. Lin, H. J. Chang, Y. F. Chen, C. F. Shih, C. A. Chang and N. C. Chen, “Concentration dependence of carrier localization in InN epilayers”, Appl. Phys. Lett. 89, 131913(2006)

17.  C. L. Wang, J. R. Gong, M. F. Yeh, B. J. Wu, W. T. Liao, T. Y. Lin, and C. K. Lin,” Improvement in the Characteristics of GaN-Based Light-Emitting Diodes by Inserting AlGaN–GaN Short-Period Superlattices in GaN Underlayers”, IEEE Photon. Tech. Lett., 18, 1497(2006)

18.  C. A. Chang, S. T. Lien, C. H. Liu, C. F. Shih, N. C. Chen, P. H. Chang, H. C. Peng, T. Y. Tang, W. C. Lien, Y. H. Wu, K. T. Wu, J. W. Chen, C. T. Liang, Y. F. Chen, T. U. Lu and T. Y. Lin,” Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Hetero- structures Grown on Si”, Jpn. J. Appl. Phys. (pt. 1) 45, 2516(2006)

19.  Y. L. Lai, C. P. Liu, Y. H. Lin, T. H. Hsueh, R. M. Lin, D. Y. Lyu, Z. X. Peng, and T. Y. Lin, ” Origins of efficient green light emission in phase-separated InGaN quantum wells”, Nanotechnology 17, 3734(2006)

20.  T. R. Tsai, S. J. Chen, C. F. Chang, S. H. Hsu, T. Y. Lin, and C. C. Chi,” Terahertz response of GaN thin films”, Optics express, 14, 4898(2006)

21.  J. S. Hwang,, Z. S. Hu, T.Y. Lu, L. W. Chen, S. W. Chen, T. Y. Lin, C. L. Hsiao, K. H. Chen, and L.C. Chen,” Photo-assisted local oxidation of GaN using an atomic force microscope”, Nanotechnology 17, 3299(2006)

22.  H. Y. Lin, Y. F. Chen, T. Y. Lin, C. F. Shih, K. S. Liu and N. C. Chen, “Direct evidence of compositional pulling effect in AlxGa1−xN epilayers”, J. Crystal. Growth 290, 225 (2006)

23.  W. S. Su, C. W. Lu, Y. F. Chen, T. Y. Lin , E. H. Lin, C. A. Chang, N. C. Chen, P. H. Chang, C. F. Shih, and K. S. Liu, “Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms”, J. Appl. Phys. 99, 053518 (2006)

24.  J. S. Hwang, Z. S. Hu, Z. Y. You, T. Y. Lin, C. L. Hsiao, and L. W. Tu, “Local oxidation of InN and GaN using an atomic force microscope”, Nanotechnology 17, 859 (2006)

25.  Y. Y. Lin, C. W. Chen, J. Chang, T. Y. Lin, I. S. Liu, and W. F. Su, ”Exciton dissociation and migration in enhanced order conjugated polymer/nanoparticle hybrid materials”, Nanotechnology 17, 1260 (2006)

26.  C. L. Wang, J. R. Gong, W. T. Liao, W. L. Wang, T. Y. Lin, C. K. Lin, “On the characteristics of AlGaN films grown on (111) and (001) Si substrates”, Solid. State. Commun. 137, 63(2006)

27.  W. T. Liao, J. R. Gong, S. W. Lin, C. L. Wang, T. Y. Lin, K. C. Chen, Y. C. Cheng, W. J. Lin,  “Growth of AlGaN and GaN films on (11-20) Al2O3 substrates and the influence of V/III ratio on the properties of GaN films”, J. Crystal. Growth 286, 28 (2006)

2005

28.  Y. L. Tsai , J. R. Gong, T. Y. Lin, H. Y. Lin, Y. F. Chen, and K. M. Lin, “Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3“, Appl. Sur, Sci. 252, 3454 (2005)

29.  C. L. Wang, J. R. Gong, W. T. Liao, C. K Lin, and T. Y. Lin, “Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers”, Thin Solid Films, 493,135(2005)

30.  H. J. Chang, C. H. Chen, Y. F. Chen, T. Y. Lin, L. C. Chen, K. H. Chen and Z. H. Lan, “Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ”[Appl. Phys. Lett. 87, 136101(2005)], Appl. Phys. Lett. 87, 136102(2005)

31.  Y. C. Lee, Y. L. Liu, C. K. Wang, J. L. Shen, P. W. Cheng, C. F. Cheng, C. H. Ko and T. Y. Lin, “Decay dynamics of blue–green luminescence in meso-porous MCM-41 nanotubes”, Journal of Luminescence 113, 258 (2005)

32.  B. H. Shih, J. R. Gong, S. W. Lin, Y. L. Tsai, W. T. Lia, T. Y. Lin, Y. T. Lee, J. G. Chang, “On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers”, J. Crystal. Growth 276, 362 (2005)

33.  S. K. Lin, K. T. Wu, C. P. Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, and T. Y. Lin,, “Electron transport in In-rich In xGa1- xN films”, J. Appl. Phys. 97, 046101(2005)

34.  H. J. Chang, C. H. Chen, Y. F. Chen, T. Y. Lin, L. C. Chen, K. H. Chen, and Z. H. Lan, “Direct evidence of nanocluster-induced luminescence in InGaN epifilms“, Appl. Phys. Lett. 86, 021911 (2005)

35.  H. J. Chang, C. H. Chen, L. Y. Huang, Y. F. Chen, and T. Y. Lin, “In-plane optical anisotropy in InxGa1-xN/GaN multiple quantum wells induced by Pockels effect”, Appl. Phys. Lett. 86, 011924 (2005)

2004

36.  T. Y. Lin*, Y. M. Sheu, Y. F. Chen, J. Y. Lin and H. X. Jiang, “Optical properties of GaN/AlN multiple quantum wells”, Solid. State. Commun. 131, 389(2004)

37.  T. Y. Lin*, W. S. Su, W. S. Su, and Y. F. Chen, “Investigation of surface properties of Si-doped GaN films by electric force microscopy and photoluminescence”, Solid. State. Commun. 130, 49 (2004)

38.  J. P. Chang, T. Y. Lin*, H. F. Hong, T. C. Gunng, J. L. Shen, Y. F. Chen,”Effects of proton irradiations on GaN-based materials”, Physica Status Solidi (c), 1, 2466(2004)

39.  Y. C. Lee, Y. L. Liu, W. Z. Lee, C. K. Wang, J. L. Shen, P. W. Cheng, C. F. Cheng, and T. Y. Lin, ”Temperature-dependent photoluminescence in meso-porous MCM nanotubes”, Phys. Stat. Sol. (a) 201, 3188(2004)

40.  C. A. Chang, C. F. Shih, N. C. Chen, T. .Y. Lin  and K. S. Liu, “ In-rich In1-xGaxN films by metal-organic vapor phase epitaxy”,  Appl. Phys. Lett. 85, 6131(2004)

41.  J. R. Gong, C.W. Huang, S. F. Tseng, T. Y. Lin, K. M. Lin, W. T. Liao, Y. L. Tsai, B. H. Shi, and C. L. Wang, “Behaviors of AlxGa1-xN (0.5<x<1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films”, J. Crystal. Growth, 260, 73 (2004)

2003

42.  T. Y. Lin*, “Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett, 82, 880 (2003)

43.  J. R. Gong, S. F. Tseng, C. W. Huang, Y. L. Tsai, W. T. Liao, C. L. Wang, B. H. Shi, and T. Y. Lin, “Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films”, Jpn. J. Appl. Phys. 42, 6823(2003)

44.  C. H. Chen, W. H. Chen, Y. F. Chen and T. Y. Lin, “Piezoelectric, electro-optical, and photoelastic effectsin InxGa1-xN/GaN multiple quantum wells”., Appl. Phys. Lett, 83, 1770 (2003)

2002

45.  C. H. Chen, L. Y. Huang, Y. F. Chen, T. Y. Lin,” In-plane crystal orientation effect on optical parameters in InGaN/GaN multiple quantum wells”, Phys Stat Soli (c) 0, 284,(2002)

46.  M. H. Ya, W. Z. Cheng, Y. F. Chen, and T. Y. Lin “Upside-down tuning of light- and heavy-hole states in GaNAs/GaAs single quantum wells by thermal expansion and quantum confinement”, Appl. Phys. Lett. 81, 3386(2002)

47.  J. R. Gong, C. L. Yeh, Y. L. Tsai, C. L. Wang, T. Y. Lin, W. H. Lan, Y. D. Shiang, Y. T. Cherng, “ Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3”, Mater. Sci. Eng. B, 94, 155(2002)

2001

48.  H. C. Yang, T. Y. Lin, Y. F. Chen “Persistent photoconductivity in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett. 78, 338(2001)

2000 and before

49.  T. Y. Lin, H. C. Yang, and Y. F. Chen, “Optical quenching of the photoconductivity in n-type GaN”, J. Appl. Phys. 87, 3404(2000).

50.  H. C. Yang, T. Y. Lin, and Y. F. Chen, “Nature of the 2.8-eV photoluminescence band in Si-doped GaN”, Phys. Rev. B 62, 12593(2000)

51.  Y. F. Chen, T. Y. Lin, and H. C. Yang, “ Exciton localization and the Stokes shift in undoped InGaN/GaN multi-quantum wells”, Proc. SPIE, 3938, 137(2000) [invited paper]

52.  H. C. Yang, P. F. Kuo, T. Y. Lin, Y. F. Ch en, K. H. Chen, L. C. Chen, and Jen- Inn Chyi,” Mechanism of luminescence in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett. 76, 3712(2000)

53.  H. C. Yang, T. Y. Lin, M. Y. Huang, and Y. F. Chen, “ Optical properties of Si-doped GaN films” , J. Appl. Phys. 86,6124(1999)

54.  W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, “ Pulsed laser deposition of GaNAs on GaAs”, Appl. Phys. Lett. 74, 3951(1999)

55.  J. L. Shen, T. Y. Lin, Y. F. Chen, and Y. H. Chang,” Studies of far-infrared magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs multiple quantum wells”, Solid State Communications, 112, 675(1999)

56.  H. Y. Wang, S.C. Huang, T. Y. Yan, J. R. Gong, T. Y. Lin, and Y. F. Chen, “ Growth and characterization of GaN films on (0001) sapphire substrates by alternative supply of trimethylgallium and NH3” Mater. Sci. Eng. B 57, 218(1999)

57.  T. Y. Lin, J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations in InGaN epitaxial films” Semicond. Sci. Technol. 14, 406(1999)

58.  T. Y. Lin, H. M. Chen, M. S. Tsai, Y. F. Chen, F. F. Fang, C. F. Lin, and G. C. Chi, “ Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures “, Phys. Rev. B 58, 13793(1998).

59.  T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “Magnetic-field-induced anomalous phase transition in p-type Si/SiGe heterojunctions “, J. Phys.: Condens. Matter 10, 9691(1998).

60.  T. Y. Lin, Y. F. Chen. W. K. Chen, and Y. S. Liu “ Effects of hydrogenation on electrical properties of InP on GaAs by the photochemical vapor deposition system”, Materials Chemistry and Physics, 33, 76(1993)

 

(B)  書籍專章(Book Chapter ):

 

1.      T. Y. Lin*, and J. R. Gong, invited review chapter entitled “III-nitrides and related nano-structures prepared by migration-enhanced organometallic vapor phase epitaxy” for “Handbook of Nanoceramics and Their Based Nanodevices”, ISBN: 1-58883-114-0, edited by T. Y. Tseng ,and H. S. Nalwa, American Scientific Publishers (www.aspbs.com), 2008.

 

(C)  本地期刊(Local Journal Papers)

1.      呂東原、林泰源、龔志榮，”原子層沉積應用在三族氮化物之生長”，科儀新知， 29 卷，1期，頁26-32，民九十六

 

(D)  研討會論文(Conference Papers)

 

1.  T. Y. Lin, J. L. Shen, W. C. Chou, R. Chang, and P. K. Wei, ”Optical properties of semiconductor nanostructures”, Annual  Meeting of Chinese Physical Society, 2008 (invited)

2.  W. J. Kao (高文章), T. Y. Lin (林泰源), C. Y. Chang (張巧芸), and J. S. Hwang (黃智賢), G. W. Shu (許嘉緯), and J. L. Shen (沈志霖), “Fabrication and characterization of nano-patterns on surface of InGaN light emitting diodes”, Annual  Meeting of Chinese Physical Society, 2008

3.  C. Y. Chang (張巧芸), W. J. Kao (高文章), T. Y. Lin (林泰源), J. S. Hwang (黃智賢), G. W.Shu(許嘉緯), J. L. Shen (沈志霖),”氮化銦鎵發光二極體奈米尺度表面粗化及光學性質研究, 2007 台灣光電科技研討會

4.  T. W. Chang(張庭維), Z. X. Peng(彭兆祥), T. Y. Lin*(林泰源), C. L. Wang(王錚亮), J. R. Gong(龔志榮), E. Y. Lin（林猷穎）, T. S. Lay(賴聰賢), “ 成長於不同溝渠深度氮化鎵模板之氮化銦鎵/氮化鋁鎵多重量子井發光性質研究”, 2007 台灣光電科技研討會

5.  W. H. Pan(潘韋澔), Z. X. Peng(彭兆祥), T. Y. Lin*(林泰源), E. Y. Lin(林猷穎) T. S. Lay(賴聰賢), C. F. Shih(施權峰), N. C. Chen(陳乃權), “使用氮化鈦緩衝層於矽(111)基板成長之氮化銦鎵/氮化鎵發光二極體結構光學性質研究”, 2007 台灣光電科技研討會

6.  H. W. Tsai(蔡學文), J. H. Lin(林建豪), W. J. Kao(高文章), T. Y. Lin*(林泰源), J. S. Hwang(黃智賢), S. M. Lan(籃山明), T. H. Yang(楊村農), C. C. Chiang(江金鎮),”氧化鋅之光學特性研究”, 2007 台灣光電科技研討會

7.  G. T. Chen(陳冠廷), G. Z. Huang(黃格致), T. Y. Lin*(林泰源), S. M. Lan (籃山明), T. H. Yang (楊村農), C. C. Chiang (江金鎮),”氧化銦奈米結構製備與光電特性之研究”, 2007 台灣光電科技研討會

8.  C. H. Hu(胡欽泓)，T. W. Chang(張庭維)，C. Y. Chang(張巧芸)，T. Y. Lin*(林泰源),J. S. Huang (黃智賢), S. M. Lan (籃山明), T. H. Yang (楊村農), C. C. Chiang (江金鎮),”硒化氫流量對硒化銦薄膜的結晶與光學性質之影響”, 2007 台灣光電科技研討會

9.  Y. H. Hu(胡鈺豪), G. T. Chen(陳冠廷), T. Y. Lin*(林泰源), J. S. Hwang*(黃智賢), H. P. Chiang(江海邦),“硒化銦奈米線之成長與物性分析”, 2007 台灣光電科技研討會

10.              G. Z. Huang, X. W. Tsai, T. Y. Lin, Z. H. Lin, J. S. Hwang, H. P. Chiang, “Structural and photoluminescence properties of gallium nitride nanowires”, Annual  Meeting of Chinese Physical Society, 2007

11.              J. H. Lin, T. Y. Lin, J. L. Shen, S. M. Lan, "Optical properties of silicon nanocrystals embedded in SiOx matrix", Annual Meeting of Chinese Physical Society, 2007.

12.              Z. X. Peng,T. Y. Lin, Z. H. Lin, H. P. Chiang, C. Y. Tseng, N. Q. Chen, Y. G. Liu, ”Characterization of polycrystalline GaN films on diamond-coated(001) Si substrate”, Annual Meeting of Chinese Physical Society, 2007

13.              C. C. Chang, W. T. Liao, J. R. Gong , J. H. Lin, T. Y. Lin, H. Y. Lin and J. S. Chen, “Characteristics of ZnO films deposited on (111) Si substrates by atomic layer deposition”, 2007 中華民國物理年會

14.              K. Y. Yan, P. Y. Lin, W. T. Liao, J. R. Gong , J. H. Lin and T. Y. Lin, “Growth and characterization of ZnO films on (0001) and (11-20) sapphire substrates by atomic layer deposition”, 2007 中華民國物理年會

15.              Z. X. Peng,T. Y. Lin, Z. H. Lin, H. P. Chiang, C. Y. Tseng, N. Q. Chen, Y. G. Liu, “Characterization of polycrystalline GaN films on diamond-coated(001) Si substrate”,   Optics and Photonics Taiwan’06, Tainan, 2006

16.              G. Z. Huang, X. W. Tsai, T. Y. Lin, Z. H. Lin，J. S. Hwang，H. P. Chiang, “Structural and photoluminescence properties of gallium nitride nanowires”, Optics and Photonics Taiwan’06, Tainan, 2006

17.              J. H. Lin, T. Y. Lin, J. L. Shen, S. M. Lan, "矽奈米晶體之光學特性研究",Optics and Photonics Taiwan’06, Tainan, 2006.

18.              D. Y. Lyu, J. H. Lin, T. Y. Lin, S. M. Lan, Z. J. Xie, S. C. Tseng, J. S. Hwang and H. P. Chiang, and, S. M. Lan, “Grownth of Single phase γ-In2Se3 thin films by metal-organic chemical vapor deposition”, International Electron Devices and Materials Symposia(IEDMS), Taiwan, 2006.

19.              D. Y. Lyu, T. Y. Lin, J. H. Lin, S. C. Tseng, J. S. Hwang, H. P. Chiang, S. M. Lan, “Growth and properties of single phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor”, Optics and Photonics Taiwan’06, Taiwan, 2006.

20.              C. L. Wang, W. L Wang, T. Y Lin and J.R Gong , “Identification of the pure edge type threading dislocations in a GaN-based light emitting diode inserted with an AlGaN/GaN superlattice structure” , 2006 中華民國物理年會

21.              E. H. Lin, T. Y. Lin, P. K. Wei, N. C. Chen, C. A. Chang,“ Study of In-rich InXGa1-XN (0.6≦X≦1）films by polarization-modulated near-field scanning optical microscopy (PM-NSOM)”, Optics and Photonics Taiwan’05, Tainan, 2005.

22.              J. Chang, T. Y. Lin. H. M. Lin, “Effect of laser annealing on the emission property of mesoporous siliceous (MCM-41),” Optics and Photonics Taiwan’05, Tainan, 2005.

23.              B-18. 王錚亮、 龔志榮 、廖偉材、林泰源、王尉霖、林中魁，“在矽基板上採用氮化鋁鎵緩衝層生長氮化鎵薄膜最佳化製程之研究”， 2005 台灣光電科技研討會

24.              B-17. 廖偉材、林世偉、 龔志榮 、王錚亮、陳克昌、呂東原、林泰源、張勝岳、林寬鉅，“氮化鋁鎵薄膜和氮化鋁鎵 / 氮化鎵異質結構生長於 A 面氧化鋁基板之研究”， 2005 台灣光電科技研討會

25.              Wei-Tsai Liao, Jyh-Rong Gong, Yu-Li Tsai, Cheng-Liang Wang, Keh-Chang Chen and Tai-Yuan Lin; “GaN Films Grown on (11-20) Sapphire Substrates Under Various V/III Ratios.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

26.              Yu-Li Tsai, Jyh-Rong Gong, Kun-Ming Lin, Wei-Tsai Liao, Cheng-Liang Wang and Tai-Yuan Lin; “Characteristics of GaN Films Grown on Wet-Etched GaN.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

27.              Cheng-Liang Wang, Jyh-Rong Gong, Chung-Kwei Lin, Wei-Tsai Liao, Yu-Li Tsai and Tai-Yuan Lin; “On the Properties of GaN Films Grown on (111) Si Substrates Using Intermediate Temperature AlGaN Buffer Layers.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

28.              T. U. Lu, J. Chang, and T. Y. Lin*, J. L. Shen, and W. C. Chou,”Properties of photoluminescence in type-II ZnSe/ZnTe quantum dots”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

29.              B. H. Shih, J. R. Gong, Y. L. Tsai, S. W. Lin, W. T. Liao, T. Y. Lin, Y. T. Lee, and J. G. Chang, “Optical and structural properties of GaN films using low-temperature Al0.8Ga0.2N interlayers”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

30.               W. T. Liao, J. R. Gong, K. C. Chen, and T. Y. Lin, “Effect of V/III ratio on the morphology and optical property of GaN films grown on (11-20) Al2O3 substrates”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

31.              J. P. Chang, T. Y. Lin, H. F. Hong , T. C. Gunng, J. L. Shen, and Y. F. Chen, “ Effects of proton irradiations on GaN-baesd material”, 5th International Symposium on Blue Laser and Light Emitting Diodes(ISBLLED), Korea, 2004

32.              T. L. Tseng, T. Y. Lin, P. K. Wei, H. L. Chou, and N. C. Chen, “ Mesoscale structures in InxGa1-xN films by polarization modulated near-field optical microscopy”, Annual Meeting of Chinese Physical Society, 2004

33.              J. P. Chang, T. Y. Lin, H. F. Hong, T. C. Gunng, J. L. Shen, and Y. F. Chen, “Effects of proton irradiations on GaN-based materials”, Annual Meeting of Chinese Physical Society, 2004

34.              T. Y. Lin, W. S. Su, W. S. Su, and Y. F. Chen ,“Surface properties of Si-doped GaN films”, International Semiconductor Device Research Symposium ,Washington, D.C. U.S.A. 2003.

35.              T. Y. Lin, K. M. Chen, W. S. Su, W. S. Su and Y. F. Chen, “Surface properties of Si-doped GaN films investigated by electric force microscopy”, Optics and Photonics Taiwan’03, Taipei, 2003.

36.              T. Y. Lin, C. L. Xuan, J. P. Chang, H. F. Hong, T.C. Gunng, J. L. Shen, and Y. F. Chen, “Effects of proton irradiations on InGaN/GaN light emitting diodes”, Electron Devices and Materials Symposium(EDMS), Keelung, Taiwan, 2003.

37.              張治平, 洪慧芬, 林泰源, 耿台成, 林國新, 辛華煜, “氮化鎵質子佈植之熱穩定性研究”, Electron Devices and Materials Symposium(EDMS), Keelung, Taiwan, 2003

38.              T. Y. Lin, “Converse piezoelectric effect in InGaN/GaN multiple quantum well”, Optics and Photonics Taiwan’02, Taipei, 2002

39.              Y. F. Chen, H. C. Yang, and T. Y. Lin, “Evidence of luminescence from In Clusters in InGaN/GaN quantum wells”, the 2nd Nanostructural Materials Conference, Taipei, Taiwan, 2000

40.              Y. F. Chen, H. C. Yang, and T. Y. Lin, “Luminescence mechanism in InGaN/GaN quantum wells” The 8th Asia Pacific Physics Conference, Taipei, Taiwan, 2000.

41.              Y. F. Chen and T. Y. Lin, “Exciton localization and Stokes’ shift in undoped InGaN/GaN quantum wells”, Optoelectronics 2000, San Jose, California, USA., 2000

42.              T. Y. Lin, and Y. F.Chen, “Optical quenching of the photoconductivity in n-type GaN”, 1999 Centennial Meeting of the American Physical Society, Atlanta, USA, 1999.

43.              W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, '' Pulsed laser deposition of GaAsN on GaAs'', Annuel meeting of Chinese Physical Society, 1999

44.              T. Y. Lin, and Y. F.Chen, “ Optical quenching of the photoconductivity in n-type GaN”, Annual meeting of Chinese Physical Society, 1999

45.              J. R. Gong, H. Y. Wang, S.C. Huang, T. Y. Yan, T. Y. Lin, Y. F. Chen, C.I. Chiang, C. H. Lin, S.L.Tu, and H. Chang, “Growth and characterization of GaN films on (0001) and (1120) sapphire substrates”, 1998 International Symposium on Surface of Thin Film Science, Shin-Chu, TAIWAN, 1998.

46.              S. L. Hsieh, M. F. Yeh, J. R. Gong, T. Y. Lin, Y. F. Chen, C.I. Chiang, C. H. Lin, and H. Chang, “ Growth of AlGaN films on (0001) sapphire substrates by atomic layer epitaxy”, 1998 International Electron Devices and Material Symposia, TAIWAN, 1998

47.              J. S. Wang, H. H. Lin, T. Y. Lin, Y. F. Chen, W. K. Hung, and M. Y. Chern,” Epitaxial growth of the GaN film on (0001) sapphire by RF atomic nitrogen plasma assisted gas source molecular beam epitaxy”, 1998 International Electron Devices and Material Symposia, 20-23, Dec. 1998, Taiwan, B1-2-P.11

48.              T. Y. Lin, J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations in InGaN epitaxial films”, Annual meeting of Chinese Physical Society, 1998.

49.              H. Y. Wang, S.C. Huang, J. R. Gong, T. Y. Lin, Y. F. Chen, C. I. Chiang, and S. L. Tu, “ Growth of GaN films on (0001) sapphire substrates by atomic layer epitaxy using hydrogen carrier gas”, Electronic devicces and materials symposium, Chun-Li, TAIWAN, 1997.

50.              T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced anomalous phase transition in p-type Si/SiGe heterojunctions “, The Second Joint Meeting of the World-Wide Chinese Physicists, Taipei, TAIWAN, 1997

51.              M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F. Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in GaN/AlGaN heterostructures “, Annual meeting of Chinese Physical Society, 1997.

52.              T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced metal-insulator-metal transition in p-type Si/SiGe heterojunctions “, Annual meeting of Chinese Physical Society, 1997.

53.              M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F. Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in GaN/AlGaN heterostructures “, Photonics, Hsin-Chu, TAIWAN, 1996.

54.              T.Y. Lin, and Y.F. Chen, ''Hydrogenation of InP on GaAs by the photochemical vapor deposition system'', Annual Meeting of Chinese Physical Society, 1992

 

(E)專利 (Patents)

1. 龔志榮，葉振隆，程亞桐，藍文厚，項裕德，林泰源，“氮化物超晶格結構對氮化鎵磊晶之品質改進”，專利公告編號 511143.

2. 龔志榮，蔡雨利，林泰源，“固態半導體裝置用之磊晶基板，固態半導體裝置及其製作方法”，專利公告編號  I 242898.