Specialty
Experimental Semiconductor Physics、Fabrications of Optoelectronic Semiconductors
Major Research Areas
(1)Optical and electrical properties of semiconductor materials
(2)Fabrications of low-dimensional semiconductors
(3)Semiconductor lightening light emitting diodes
Publications
Refereed Papers
Papers in review or
in revision (*corresponding author)
Papers accepted or published (*corresponding
author)
1.
T. Y. Lin*, D. Y.
Lyu, J. Chang, J. L. Shen and W. C. Chou, “Properties of
photoluminescence in type-II ZnTe/ZnSe quantum dots”, Appl. Phys.
Lett., (in press) (2006)
2.
H. Y.
Lin, Y. F. Chen, T. Y. Lin, C. F. Shih, K. S. Liu and N. C. Chen,
“Direct evidence of compositional pulling effect in AlxGa1−xN
epilayers”, J. Crystal. Growth (in press) (2006)
3.
W. S. Su, C.
W. Lu, Y. F. Chen, T. Y. Lin , E. H. Lin, C. A. Chang, N. C.
Chen, P. H. Chang, C. F. Shih, and K. S. Liu, “Light
induced electrostatic force spectroscopy: Application to local
electronic transitions in InN epifilms”, J. Appl. Phys.
99,
053518 (2006)
4.
T. Y. Lin,
Y. M. Sheu, Y. F. Chen, “Origin
of blue-band emission from Mg-doped AlGaN/
GaN Superlattices”, Appl. Phys. Lett. 88, 081912 (2006)
5.
J. S. Hwang,
Z. S. Hu,
Z. Y. You,
T. Y. Lin,
C. L. Hsiao,
and
L. W. Tu, “Local
oxidation of InN and GaN using an atomic force microscope”,
Nanotechnology 17, 859 (2006)
6.
Y. Y. Lin,
C. W. Chen,
J. Chang,
T. Y. Lin,
I. S. Liu,
and
W. F. Su,
”Exciton dissociation and migration
in enhanced order conjugated polymer/nanoparticle hybrid materials”,
Nanotechnology 17, 1260 (2006)
7.
C.
L. Wang, J. R. Gong, W. T. Liao, W. L. Wang, T. Y. Lin, C. K.
Lin, “On the characteristics of AlGaN films grown on (111) and (001) Si
substrates”, Solid. State. Commun. 137,
63(2006)
8.
W. T.
Liao, J. R.
Gong, S. W.
Lin, C. L.
Wang, T.
Y.
Lin, K. C.
Chen, Y. C.
Cheng, W. J. Lin, “Growth of AlGaN and GaN films on (11-20) Al2O3
substrates and the influence of V/III ratio on the properties of GaN
films”,
J. Crystal. Growth 286, 28 (2006)
9.
Y. L. Tsai , J. R. Gong, T.
Y. Lin, H. Y. Lin, Y. F. Chen, and K. M. Lin, “Morphological
and luminescent characteristics of GaN dots deposited on AlN by
alternate supply of TMG and NH3“, Appl. Sur,
Sci. 252, 3454 (2006)
10.
C. L. Wang,
J. R. Gong, W. T. Liao, C. K Lin, and T. Y. Lin, “Deposition
of AlGaN films on (111) Si substrates and optimization of GaN growth on
Si using intermediate-temperature AlGaN buffer layers”, Thin Solid
Films, 493,135(2005)
11.
H. J. Chang, C. H. Chen, Y. F. Chen,
T. Y. Lin, L. C. Chen, K. H. Chen and Z. H. Lan, “Response to
“Comment on ‘Direct evidence of nanocluster-induced luminescence in
InGaN epifilms’ ”[Appl. Phys. Lett. 87, 136101(2005)],
Appl. Phys. Lett.
87, 136102(2005)
12.
Y. C. Lee, Y. L. Liu, C. K.
Wang, J. L. Shen, P. W. Cheng, C. F. Cheng, C.H. Ko and T. Y. Lin,
“Decay dynamics of blue–green luminescence in meso-porous MCM-41
nanotubes”,
Journal of
Luminescence 113, 258 (2005)
13.
B. H. Shih, J. R. Gong, S. W. Lin, Y.
L. Tsai, W. T. Lia, T. Y. Lin, Y. T. Lee, J. G. Chang, “On
the optical properties and microstructures of GaN films inserted
with low-temperature Al0.8Ga0.2N interlayers”,
J. Crystal. Growth 276, 362 (2005)
14.
S. K. Lin, K. T. Wu, C. P. Huang, C.
T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A.
Chang, H. C. Peng, C. F. Shih, K. S. Liu, and T. Y. Lin,,
“Electron transport in In-rich In xGa1- xN films”, J. Appl. Phys.
97, 046101(2005)
15.
H. J. Chang, C. H. Chen, Y. F. Chen,
T. Y. Lin, L. C. Chen, K. H. Chen, and Z. H. Lan, “Direct
evidence of nanocluster-induced luminescence in InGaN epifilms“,
Appl. Phys. Lett. 86, 021911 (2005)
16.
H. J. Chang,
C. H. Chen, L. Y. Huang, Y. F. Chen, and T. Y. Lin, “In-plane
optical anisotropy in InxGa1-xN/GaN multiple
quantum wells induced by Pockels effect”,
Appl. Phys. Lett. 86, 011924 (2005)
17.
Y. C.
Lee 2, Y. L. Liu, W. Z. Lee, C. K. Wang, J. L. Shen, P. W. Cheng, C.
F. Cheng, and T. Y. Lin, ”Temperature-dependent
photoluminescence in meso-porous MCM nanotubes”, Phys. Stat. Sol.
(a) 201, 3188(2004)
18.
C. A. Chang, C. F. Shih, N.
C. Chen, T. .Y. Lin and K. S. Liu, “ In-rich In1-xGaxN
films by metal-organic vapor phase epitaxy”, Appl. Phys. Lett.
85, 6131(2004)
19.
J. P. Chang,
T. Y. Lin*, H. F. Hong, T. C. Gunng, J. L. Shen, Y. F. Chen,”Effects
of proton irradiations on GaN-based materials”, Physica
Status Solidi (c), 1, 2466(2004)
20.
T. Y. Lin*, Y. M. Sheu, Y. F. Chen, J.
Y. Lin and H. X. Jiang, “Optical properties of GaN/AlN multiple
quantum wells”, Solid. State. Commun. 131, 389(2004)
21.
T. Y. Lin*,
W. S. Su, W. S. Su, and Y. F. Chen, “Investigation of surface
properties of Si-doped GaN films by electric force microscopy and
photoluminescence”, Solid. State. Commun. 130, 49 (2004)
22.
J. R. Gong, C.W. Huang, S. F. Tseng,
T. Y. Lin, K. M. Lin, W. T. Liao,
Y. L. Tsai, B. H.
Shi, and C. L. Wang,
“Behaviors of AlxGa1-xN
(0.5<x<1.0)/GaN short period strained-layer superlattices on the
threading dislocation density reduction in GaN films”, J. Crystal.
Growth, 260, 73 (2004)
23.
J. R. Gong, S. F. Tseng, C. W. Huang,
Y. L. Tsai, W. T. Liao, C. L. Wang, B. H. Shi, and T. Y. Lin,
“Effects of Al-containing Intermediate III-nitride Strained Multilayers
on the Threading Dislocation Density and Optical Properties of GaN
Films”, Jpn. J. Appl. Phys. 42, 6823(2003)
24.
C. H. Chen, W. H. Chen, Y. F. Chen and
T. Y. Lin, “Piezoelectric, electro-optical, and photoelastic
effectsin InxGa1-xN/GaN multiple quantum
wells”., Appl. Phys. Lett, 83, 1770 (2003)
25.
T. Y. Lin*,
“Converse piezoelectric effect and photoelastic effect in InGaN/GaN
multiple quantum wells”, Appl. Phys. Lett, 82, 880 (2003)
26.
C. H. Chen, L. Y. Huang, Y. F. Chen,
T. Y. Lin,” In-plane crystal orientation effect on optical
parameters in InGaN/GaN multiple quantum wells”, Phys Stat Soli (c)
0, 284,(2002)
27.
M. H. Ya, W. Z. Cheng, Y. F. Chen, and
T. Y. Lin “Upside-down tuning of light- and heavy-hole states
in GaNAs/GaAs single quantum wells by thermal expansion and quantum
confinement”, Appl. Phys. Lett. 81, 3386(2002)
28.
J. R. Gong, C. L. Yeh, Y. L. Tsai, C.
L. Wang, T. Y. Lin, W. H. Lan, Y. D. Shiang, Y. T. Cherng, “
Influence of AlN/GaN strained multi-layers on the threading
dislocations in GaN films grown by alternate supply of metalorganics
and NH3”, Mater. Sci. Eng. B,
94,
155(2002)
29.
H. C. Yang, T. Y. Lin, Y. F.
Chen “Persistent photoconductivity in InGaN/GaN multiple quantum
wells”, Appl. Phys. Lett. 78, 338(2001)
30.
H. C. Yang, T. Y. Lin, and Y.
F. Chen, “Nature of the 2.8-eV photoluminescence band in Si-doped
GaN”, Phys. Rev. B 62, 12593(2000)
31.
Y. F. Chen, T. Y. Lin, and H.
C. Yang, “ Exciton localization and the Stokes shift in undoped
InGaN/GaN multi-quantum wells”, Proc. SPIE, 3938, 137(2000)
[invited paper]
32.
H. C. Yang, P. F. Kuo, T. Y. Lin,
Y. F. Ch en, K. H. Chen, L. C. Chen, and Jen- Inn Chyi,” Mechanism
of luminescence in InGaN/GaN multiple quantum wells”, Appl. Phys.
Lett. 76, 3712(2000)
33.
T. Y. Lin,
H. C. Yang, and Y. F. Chen, “Optical quenching of the
photoconductivity in n-type GaN”, J. Appl. Phys. 87,
3404(2000).
34.
H. C. Yang, T. Y. Lin, M. Y.
Huang, and Y. F. Chen, “ Optical properties of Si-doped GaN films” , J.
Appl. Phys. 86,6124(1999)
35.
W. K. Hung, M. Y. Chern, J. C. Fan,
T. Y. Lin, and Y. F. Chen, “ Pulsed laser deposition of GaNAs on
GaAs”, 74, 3951(1999)
36.
J. L. Shen, T. Y. Lin, Y. F.
Chen, and Y. H. Chang,” Studies of far-infrared
magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs
multiple quantum wells”, Solid State Communications, 112,
675(1999)
37.
H. Y. Wang, S.C. Huang, T. Y.
Yan, J. R. Gong, T. Y. Lin, and Y. F. Chen, “ Growth and
characterization of GaN films on (0001) sapphire substrates by
alternative supply of trimethylgallium and NH3” Mater.
Sci. Eng. B 57, 218(1999)
38.
T. Y. Lin,
J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations
in InGaN epitaxial films” Semicond. Sci. Technol. 14,
406(1999)
39.
T. Y. Lin,
H. M. Chen, M. S. Tsai, Y. F. Chen, F. F. Fang, C. F. Lin, and G. C.
Chi, “ Two-dimensional electron gas and persistent photoconductivity in
AlxGa1-xN/GaN heterostructures “, Phys. Rev. B
58, 13793(1998).
40.
T. Y. Lin,
M. S. Tsai, Y. F. Chen, and F. F. Fang, “Magnetic-field-induced
anomalous phase transition in p-type Si/SiGe heterojunctions “, J.
Phys.: Condens. Matter 10, 9691(1998).
41.
T. Y. Lin,
Y. F. Chen. W. K. Chen, and Y. S. Liu “ Effects of hydrogenation on
electrical properties of InP on GaAs by the photochemical vapor
deposition system”, Materials Chemistry and Physics, 33, 76(1993)
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Conference Papers
1.
E. H. Lin, T. Y. Lin, P. K. Wei, N. C. Chen, C. A.
Chang,“ Study of In-rich InXGa1-XN (0.6≦X≦1)films
by polarization-modulated near-field scanning optical microscopy
(PM-NSOM)”, Optics and Photonics Taiwan’05, Tainan, 2005.
2.
J. Chang, T. Y. Lin. H. M. Lin, “Effect of laser annealing on
the emission property of mesoporous siliceous (MCM-41),” Optics and
Photonics Taiwan’05, Tainan, 2005.
3.
Wei-Tsai Liao, Jyh-Rong Gong, Yu-Li Tsai, Cheng-Liang Wang,
Keh-Chang Chen and Tai-Yuan Lin; “GaN Films Grown on (11-20)
Sapphire Substrates Under Various V/III Ratios.”, 2005 MATERIALS
RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005
4.
Yu-Li Tsai, Jyh-Rong Gong, Kun-Ming Lin, Wei-Tsai Liao,
Cheng-Liang Wang and Tai-Yuan Lin; “Characteristics of GaN
Films Grown on Wet-Etched GaN.”, 2005 MATERIALS RESEARCH SOCIETY
SPRING MEETING, SAN FRANCISCO, CA USA, 2005
5.
Cheng-Liang Wang, Jyh-Rong Gong, Chung-Kwei Lin, Wei-Tsai
Liao, Yu-Li Tsai and Tai-Yuan Lin; “On the Properties of GaN
Films Grown on (111) Si Substrates Using Intermediate Temperature
AlGaN Buffer Layers.”, 2005 MATERIALS RESEARCH SOCIETY SPRING
MEETING, SAN FRANCISCO, CA USA, 2005
6.
T. U. Lu, J. Chang, and T. Y. Lin*,J.
L. Shen, and W. C. Chou,”Properties of photoluminescence in type-II
ZnSe/ZnTe quantum dots”, Optics and Photonics Taiwan’04, Chung-Li,
2004.
7.
B. H. Shih, J. R. Gong, Y. L. Tsai, S. W. Lin, W. T. Liao,
T. Y. Lin, Y. T. Lee, and J. G. Chang, “Optical and structural
properties of GaN films using low-temperature Al0.8Ga0.2N
interlayers”, Optics and Photonics Taiwan’04, Chung-Li, 2004.
8.
W. T. Liao, J. R. Gong, K. C. Chen, and T. Y. Lin,
“Effect of V/III ratio on the morphology and optical property of GaN
films grown on (11-20) Al2O3 substrates”,
Optics and Photonics Taiwan’04, Chung-Li, 2004.
9.
J. P. Chang, T. Y. Lin, H. F. Hong , T. C. Gunng, J.
L. Shen, and Y. F. Chen, “ Effects of proton irradiations on
GaN-baesd material”, 5th International Symposium on Blue
Laser and Light Emitting Diodes(ISBLLED), Korea, 2004
10.
T. L. Tseng, T. Y. LIN, P. K. Wei, H. L. Chou, and N.
C. Chen, “ Mesoscale structures in InxGa1-xN
films by polarization modulated near-field optical microscopy”,
Annual Meeting of Chinese Physical Society, 2004
11.
J. P. Chang,
T. Y. Lin, H. F. Hong, T. C. Gunng, J. L. Shen, and Y. F. Chen,
“Effects of proton irradiations on GaN-based materials”, Annual
Meeting of Chinese Physical Society, 2004
12.
T. Y. Lin,
W. S. Su, W. S. Su, and Y. F. Chen ,“Surface properties of Si-doped
GaN films”, International Semiconductor Device Research Symposium
,Washington, D.C. U.S.A. 2003.
13.
T. Y. Lin,
K. M. Chen, W. S. Su, W. S. Su and Y. F. Chen, “Surface properties
of Si-doped GaN films investigated by electric force microscopy”,
Optics and Photonics Taiwan’03, Taipei, 2003.
14.
T. Y. Lin,
C. L. Xuan, J. P. Chang, H. F. Hong, T.C. Gunng, J. L. Shen, and Y.
F. Chen, “Effects of proton irradiations on InGaN/GaN light emitting
diodes”, Electron Devices and Materials Symposium(EDMS), Keelung,
Taiwan, 2003.
15.
張治平,
洪慧芬,
林泰源,
耿台成,
林國新,
辛華煜,
“氮化鎵質子佈植之熱穩定性研究”,
Electron Devices and Materials Symposium(EDMS), Keelung, Taiwan,
2003
16.
T. Y. Lin,
“Converse piezoelectric effect in InGaN/GaN multiple quantum well”,
Optics and Photonics Taiwan’02, Taipei, 2002
17.
Y. F. Chen, H. C. Yang, and T. Y. Lin, “Evidence of
luminescence from In Clusters in InGaN/GaN quantum wells”, the 2nd
Nanostructural Materials Conference, Taipei, Taiwan, 2000
18.
Y. F. Chen, H. C. Yang, and T. Y. Lin, “Luminescence
mechanism in InGaN/GaN quantum wells” The 8th Asia
Pacific Physics Conference, Taipei, Taiwan, 2000.
19.
Y. F. Chen and T. Y. Lin, “Exciton localization and
Stokes’ shift in undoped InGaN/GaN quantum wells”, Optoelectronics
2000, San Jose, California, USA., 2000
20.
T. Y. Lin,
and Y. F.Chen, “Optical quenching of the photoconductivity in n-type
GaN”, 1999 Centennial Meeting of the American Physical Society,
Atlanta, USA, 1999.
21.
W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y.
F. Chen, '' Pulsed laser deposition of GaAsN on GaAs'', Annuel
meeting of Chinese Physical Society, 1999
22.
T. Y. Lin,
and Y. F.Chen, “ Optical quenching of the photoconductivity in
n-type GaN”, Annual meeting of Chinese Physical Society, 1999
23.
J. R. Gong, H. Y. Wang, S.C. Huang, T. Y. Yan, T. Y. Lin,
Y. F. Chen, C.I. Chiang, C. H. Lin, S.L.Tu, and H. Chang, “Growth
and characterization of GaN films on (0001) and (1120) sapphire
substrates”, 1998 International Symposium on Surface of Thin Film
Science, Shin-Chu, TAIWAN, 1998.
24.
S. L. Hsieh, M. F. Yeh, J. R. Gong, T. Y. Lin, Y. F.
Chen, C.I. Chiang, C. H. Lin, and H. Chang, “ Growth of AlGaN films
on (0001) sapphire substrates by atomic layer epitaxy”, 1998
International Electron Devices and Material Symposia, TAIWAN, 1998
25.
J. S. Wang, H. H. Lin, T. Y. Lin, Y. F. Chen, W. K.
Hung, and M. Y. Chern,” Epitaxial growth of the GaN film on (0001)
sapphire by RF atomic nitrogen plasma assisted gas source molecular
beam epitaxy”, 1998 International Electron Devices and Material
Symposia, 20-23, Dec. 1998, Taiwan, B1-2-P.11
26.
T. Y. Lin,
J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations
in InGaN epitaxial films”, Annual meeting of Chinese Physical
Society, 1998.
27.
H. Y. Wang, S.C. Huang, J. R. Gong, T. Y. Lin, Y. F.
Chen, C. I. Chiang, and S. L. Tu, “ Growth of GaN films on (0001)
sapphire substrates by atomic layer epitaxy using hydrogen carrier
gas”, Electronic devicces and materials symposium, Chun-Li, TAIWAN,
1997.
28.
T. Y. Lin,
M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced
anomalous phase transition in p-type Si/SiGe heterojunctions “, The
Second Joint Meeting of the World-Wide Chinese Physicists, Taipei,
TAIWAN, 1997
29.
M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F.
Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in
GaN/AlGaN heterostructures “, Annual meeting of Chinese Physical
Society, 1997.
30.
T. Y. Lin,
M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced
metal-insulator-metal transition in p-type Si/SiGe heterojunctions
“, Annual meeting of Chinese Physical Society, 1997.
31.
M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F.
Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in
GaN/AlGaN heterostructures “, Photonics, Hsin-Chu, TAIWAN, 1996.
32.
T.Y. Lin,
and Y.F. Chen, ''Hydrogenation of InP on GaAs by the photochemical
vapor deposition system'', Annual Meeting of Chinese Physical
Society, 1992
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專利
1.
龔志榮,葉振隆,程亞桐,藍文厚,項裕德,林泰源,“氮化物超晶格結構對氮化鎵磊晶之品質改進”,專利公告編號
511143.
2.
龔志榮,蔡雨利,林泰源,“固態半導體裝置用之磊晶基板,固態半導體裝置及其製作方法”,專利公告編號
I 24289 |
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